КТ897А

КТ897, КТ897А, КТ897Б

Silicon compound transistor with built-in zener diode, analog BU931Z for operation in switching power supplies with inductive load

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Description

Parameters

ParameterКТ897АКТ897Б
Collector surge current
IC-i
<30 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<350 V<200 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<350 V<200 V
Static current transfer coefficient of bipolar transistor
hFE
>400
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<250 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<10 MHz
Noise factor
NF
<1.6 dB
Bipolar transistor structure
Structure
NPN
Transistor collector power with heatsink
PC-HS
<125 W