КТ896А

КТ896, КТ896А, КТ896Б, КТ896В

Silicon composite transistor for operation in switching and linear circuits

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Description

Parameters

ParameterКТ896АКТ896БКТ896В
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<100 V<80 V<60 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V<40 V<30 V
Static current transfer coefficient of bipolar transistor
hFE
750 ~ 18000
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<2 mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<10 MHz
Noise factor
NF
<2 dB
Bipolar transistor structure
Structure
PNP
Transistor collector power with heatsink
PC-HS
<125 W