КТ878А

КТ878, КТ878А, КТ878Б, КТ878В

Silicon high voltage switching transistor for use in switching devices, pulse modulators, in secondary power sources

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Description

Parameters

ParameterКТ878АКТ878БКТ878В
Collector surge current
IC-i
<50 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<500 V<800 V<800 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<500 V<800 V<600 V
Static current transfer coefficient of bipolar transistor
hFE
12 ~ 50
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<3 mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<10 MHz
Noise factor
NF
<1.5 dB
Bipolar transistor structure
Structure
NPN
Transistor collector power with heatsink
PC-HS
<150 W