КТ872Б

КТ872, КТ872А, КТ872Б, КТ872В

Silicon high-voltage transistor for use in terminal stages of horizontal scanning color TVs

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Description

Parameters

ParameterКТ872АКТ872БКТ872В
Collector surge current
IC-i
<15 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<700 V<700 V<600 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<700 V<700 V<600 V
Static current transfer coefficient of bipolar transistor
hFE
(not set)(not set)>6
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<1 mA<1 mA<600 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<7 MHz
Noise factor
NF
<1 dB
Bipolar transistor structure
Structure
NPN
Collector-base pulse voltage
UCBO-i
<1.5 kV<1.5 kV<1.2 kV
Transistor collector power with heatsink
PC-HS
<100 W
Collector-emitter pulse voltage with base disconnected
UCEO-i
<1.5 kV<1.5 kV<1.2 kV