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| Parameter | КТ855А | КТ855Б | КТ855В | |
|---|---|---|---|---|
Collector surge current | IC-i | <8 A | ||
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <250 V | <150 V | <150 V |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <250 V | <150 V | <150 V |
Static current transfer coefficient of bipolar transistor | hFE | >20 | >20 | >15 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <1 mA | <100 µA | <1 mA |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <5 MHz | ||
Noise factor | NF | <1 dB | ||
Bipolar transistor structure | Structure | PNP | ||
Transistor collector power with heatsink | PC-HS | <40 W | ||