КТ852А

КТ852, КТ852А, КТ852Б, КТ852В, КТ852Г

High Power Silicon Composite Transistor for Amplifier and Switching Devices

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Description

Parameters

ParameterКТ852АКТ852БКТ852ВКТ852Г
Collector surge current
IC-i
<4 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<100 V<80 V<60 V<45 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<100 V<80 V<60 V<45 V
Static current transfer coefficient of bipolar transistor
hFE
>500>500>1000>1000
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<500 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<7 MHz
Noise factor
NF
<2.5 dB
Bipolar transistor structure
Structure
PNP
Transistor collector power with heatsink
PC-HS
<50 W