КТ851А

КТ851, КТ851А, КТ851Б, КТ851В

High power silicon transistor for use in power amplifiers, switching devices

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Description

Parameters

ParameterКТ851АКТ851БКТ851В
Collector surge current
IC-i
<3 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<250 V<300 V<130 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<200 V<250 V<150 V
Static current transfer coefficient of bipolar transistor
hFE
40 ~ 200>20>20
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<100 µA<500 µA<500 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<20 MHz
Noise factor
NF
<1 dB
Bipolar transistor structure
Structure
PNP
Transistor collector power with heatsink
PC-HS
<25 W