1Т840Б

КТ840, 1Т840А, 1Т840Б

High-power silicon transistor for "Электроника Ц-402" TV sets and for switching power sources

Documents

Description

Parameters

Parameter1Т840А1Т840Б
Collector surge current
IC-i
<8 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<400 V<350 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<400 V<350 V
Static current transfer coefficient of bipolar transistor
hFE
10 ~ 60>10
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<3 mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<8 MHz
Noise factor
NF
<3 dB
Bipolar transistor structure
Structure
NPN
Transistor collector power with heatsink
PC-HS
<60 W