КТ837А

КТ837, КТ837А, КТ837Б, КТ837В, КТ837Г, КТ837Д, КТ837Е, КТ837Ж, КТ837И, КТ837К, КТ837Л, КТ837М, КТ837Н, КТ837П, КТ837Р, КТ837С, КТ837Т, КТ837У, КТ837Ф

High power silicon transistor for use in amplifiers and switching devices

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Description

Parameters

ParameterКТ837АКТ837БКТ837ВКТ837ГКТ837ДКТ837ЕКТ837ЖКТ837ИКТ837ККТ837ЛКТ837МКТ837НКТ837ПКТ837РКТ837СКТ837ТКТ837УКТ837Ф
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<80 V<80 V<80 V<60 V<60 V<60 V<45 V<45 V<45 V<80 V<80 V<80 V<80 V<60 V<60 V<45 V<45 V<45 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<80 V<60 V<60 V<45 V<45 V<45 V<30 V<30 V<30 V<60 V<60 V<60 V<45 V<45 V<45 V<30 V<30 V<30 V
Static current transfer coefficient of bipolar transistor
hFE
10 ~ 4020 ~ 8050 ~ 15010 ~ 4020 ~ 8050 ~ 15010 ~ 4020 ~ 8050 ~ 15010 ~ 4020 ~ 8050 ~ 15010 ~ 4020 ~ 8050 ~ 15010 ~ 4020 ~ 8050 ~ 150
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<150 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<1 MHz
Noise factor
NF
<2.5 dB<2.5 dB<2.5 dB<900 mdB<900 mdB<900 mdB<500 mdB<500 mdB<500 mdB<2.5 dB<2.5 dB<2.5 dB<900 mdB<900 mdB<900 mdB<500 mdB<500 mdB<500 mdB
Bipolar transistor structure
Structure
PNP
Transistor collector power with heatsink
PC-HS
<30 W