КТ835Б

КТ835, КТ835А, КТ835Б

High power silicon transistor for operation in switching power amplifiers, secondary power supplies, amplifiers and converters

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Description

Parameters

ParameterКТ835АКТ835Б
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<30 V<45 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<30 V<45 V
Static current transfer coefficient of bipolar transistor
hFE
>2510 ~ 100
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<100 µA<150 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<1 MHz
Noise factor
NF
<350 mdB
Bipolar transistor structure
Structure
PNP
Transistor collector power with heatsink
PC-HS
<25 W