КТ829

КТ829, КТ829А, КТ829Б, КТ829В, КТ829Г

High-power silicon composite transistor for operation in low-frequency amplifiers, switching circuits

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Description

Parameters

ParameterКТ829АКТ829БКТ829ВКТ829Г
Collector surge current
IC-i
<12 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<100 V<80 V<80 V<45 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<100 V<80 V<60 V<45 V
Static current transfer coefficient of bipolar transistor
hFE
>750
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<200 µA<50.2 mA<200 µA<200 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<4 MHz
Noise factor
NF
<2 dB
Bipolar transistor structure
Structure
NPN
Transistor collector power with heatsink
PC-HS
<60 W