2Т825Б

КТ825, 2Т825А, 2Т825Б, 2Т825В, КТ825Г, КТ825Д, КТ825Е

High-power silicon composite transistor for operation in low-frequency amplifiers, pulsed power amplifiers, current and voltage stabilizers, repeaters, switches, in electronic control systems, in automation and protection circuits

Documents

Description

Parameters

Parameter2Т825А2Т825Б2Т825ВКТ825ГКТ825ДКТ825Е
Collector surge current
IC-i
<40 A<40 A<40 A<30 A<30 A<30 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<100 V<80 V<60 V<90 V<60 V<30 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<100 V<80 V<60 V<90 V<60 V<30 V
Static current transfer coefficient of bipolar transistor
hFE
500 ~ 18000750 ~ 18000750 ~ 18000750 ~ 18000750 ~ 18000750 ~ 18000
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<1 mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<4 MHz
Noise factor
NF
<2 dB
Bipolar transistor structure
Structure
PNP
Transistor collector power with heatsink
PC-HS
<160 W<160 W<160 W<125 W<125 W<125 W