2Т819Б

КТ819, КТ819А, КТ819Б, КТ819В, КТ819Г, КТ819АМ, КТ819БМ, КТ819ВМ, КТ819ГМ, 2Т819А, 2Т819Б, 2Т819В

High-power silicon transistor for operation in low-frequency amplifiers, operational and differential amplifiers, converters and pulse circuits

Documents

Description

Parameters

ParameterКТ819АКТ819БКТ819ВКТ819ГКТ819АМКТ819БМКТ819ВМКТ819ГМ2Т819А2Т819Б2Т819В
Collector surge current
IC-i
<15 A<15 A<15 A<15 A<20 A<20 A<20 A<20 A<20 A<20 A<20 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<40 V<50 V<70 V<100 V<40 V<50 V<70 V<100 V<100 V<80 V<60 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<40 V<50 V<70 V<100 V<40 V<50 V<70 V<100 V<100 V<80 V<60 V
Constant power dissipated on the transistor collector
PC
<1.5 W<1.5 W<1.5 W<1.5 W<2 W<2 W<2 W<2 W<3 W<3 W<3 W
Static current transfer coefficient of bipolar transistor
hFE
15 ~ 22520 ~ 22515 ~ 22512 ~ 22515 ~ 22520 ~ 22515 ~ 22512 ~ 22520 ~ 22520 ~ 22520 ~ 225
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<1 mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<3 MHz
Noise factor
NF
<2 dB<2 dB<2 dB<2 dB<2 dB<2 dB<2 dB<2 dB<1 dB<1 dB<1 dB
Bipolar transistor structure
Structure
NPNNPNNPNNPNNPNNPNNPNNPNPNPPNPPNP
Transistor collector power with heatsink
PC-HS
<60 W<60 W<60 W<60 W<100 W<100 W<100 W<100 W<100 W<100 W<100 W