2Т818В

КТ818, КТ818А, КТ818Б, КТ818В, КТ818Г, КТ818АМ, КТ818БМ, КТ818ВМ, КТ818ГМ, 2Т818Б, 2Т818В

High-power silicon transistor for operation in low-frequency amplifiers, operational and differential amplifiers, converters and pulse circuits

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Description

Parameters

ParameterКТ818АКТ818БКТ818ВКТ818ГКТ818АМКТ818БМКТ818ВМКТ818ГМ2Т818Б2Т818В
Collector surge current
IC-i
<15 A<15 A<15 A<15 A<20 A<20 A<20 A<20 A<20 A<20 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<40 V<50 V<70 V<90 V<40 V<50 V<70 V<90 V<80 V<60 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<40 V<50 V<70 V<90 V<40 V<50 V<70 V<90 V<80 V<60 V
Constant power dissipated on the transistor collector
PC
<1.5 W<1.5 W<1.5 W<1.5 W<2 W<2 W<2 W<2 W<3 W<3 W
Static current transfer coefficient of bipolar transistor
hFE
15 ~ 22520 ~ 22515 ~ 22512 ~ 22515 ~ 22520 ~ 22515 ~ 22512 ~ 22520 ~ 22520 ~ 225
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<1 mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<3 MHz
Noise factor
NF
<2 dB<2 dB<2 dB<2 dB<2 dB<2 dB<2 dB<2 dB<1 dB<1 dB
Bipolar transistor structure
Structure
PNP
Transistor collector power with heatsink
PC-HS
<60 W<60 W<80 W<60 W<100 W<100 W<100 W<100 W<100 W<100 W