КТ817А

КТ817, КТ817А, КТ817Б, КТ817Б2, КТ817В, КТ817Г, КТ817Г2

High-power silicon transistor for operation in low-frequency amplifiers, operational and differential amplifiers, converters and pulse circuits

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Description

Parameters

ParameterКТ817АКТ817БКТ817Б2КТ817ВКТ817ГКТ817Г2
Collector surge current
IC-i
<6 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<40 V<45 V<45 V<60 V<100 V<100 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<40 V<45 V<45 V<60 V<90 V<90 V
Constant power dissipated on the transistor collector
PC
<1 W
Static current transfer coefficient of bipolar transistor
hFE
25 ~ 27525 ~ 275>10025 ~ 27525 ~ 275>100
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<100 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<3 MHz
Noise factor
NF
<600 mdB<600 mdB<120 mdB<600 mdB<600 mdB<120 mdB
Bipolar transistor structure
Structure
NPN
Transistor collector power with heatsink
PC-HS
<25 W