КТ815Б

КТ815, КТ815А, КТ815Б, КТ815В, КТ815Г

High-power silicon transistor for operation in low-frequency amplifiers, operational and differential amplifiers, converters and pulse circuits

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Description

Parameters

ParameterКТ815АКТ815БКТ815ВКТ815Г
Collector surge current
IC-i
<3 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<40 V<50 V<70 V<100 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<30 V<45 V<65 V<85 V
Constant power dissipated on the transistor collector
PC
<1 W
Static current transfer coefficient of bipolar transistor
hFE
40 ~ 27540 ~ 27540 ~ 27530 ~ 275
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<50 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<3 MHz
Noise factor
NF
<600 mdB
Bipolar transistor structure
Structure
NPN
Transistor collector power with heatsink
PC-HS
<10 W