КТ8140А

КТ8140, КТ8140А

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Description

Parameters

ParameterКТ8140А
Collector surge current
IC-i
<10 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<400 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<200 V
Static current transfer coefficient of bipolar transistor
hFE
>10
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<2 mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<7 MHz
Noise factor
NF
<1 dB
Bipolar transistor structure
Structure
NPN
Transistor collector power with heatsink
PC-HS
<60 W