КТ8130А

КТ8130, КТ8130А, КТ8130Б, КТ8130В

High power silicon transistor for operation in linear and switching CEA circuits of wide application

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Description

Parameters

ParameterКТ8130АКТ8130БКТ8130В
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<40 V<60 V<80 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<40 V<60 V<80 V
Static current transfer coefficient of bipolar transistor
hFE
500 ~ 15000
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<500 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<25 MHz
Noise factor
NF
<2 dB
Bipolar transistor structure
Structure
PNP
Transistor collector power with heatsink
PC-HS
<20 W