КТ8129А

КТ8129, КТ8129А

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Description

Parameters

ParameterКТ8129А
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<1.5 kV
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<700 V
Static current transfer coefficient of bipolar transistor
hFE
>2.25
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<4.5 mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<4 MHz
Noise factor
NF
<4.5 dB
Bipolar transistor structure
Structure
NPN
Transistor collector power with heatsink
PC-HS
<100 W