КТ8114Б

КТ8114, КТ8114А, КТ8114Б, КТ8114В

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Description

Parameters

ParameterКТ8114АКТ8114БКТ8114В
Collector surge current
IC-i
<15 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<1.5 kV<1.2 kV<1.2 kV
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<700 V
Static current transfer coefficient of bipolar transistor
hFE
(not set)(not set)>6
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<100 µA<100 µA<5.1 mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<7 MHz
Noise factor
NF
<1 dB<5 dB<2.5 dB
Bipolar transistor structure
Structure
NPN
Transistor collector power with heatsink
PC-HS
<125 W