КТ808А

КТ808, КТ808А, КТ808АМ, КТ808БМ, КТ808ВМ, КТ808ГМ

High power silicon transistor for operation in switching circuits, horizontal generators, electronic voltage regulators

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Description

Parameters

ParameterКТ808АКТ808АМКТ808БМКТ808ВМКТ808ГМ
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<120 V<120 V<100 V<80 V<70 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<120 V<120 V<100 V<80 V<70 V
Constant power dissipated on the transistor collector
PC
<5 W(not set)(not set)(not set)(not set)
Static current transfer coefficient of bipolar transistor
hFE
10 ~ 5020 ~ 12520 ~ 12520 ~ 12520 ~ 125
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<3 mA<2 mA<2 mA<2 mA<2 mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<7.2 MHz<8 MHz<8 MHz<8 MHz<8 MHz
Noise factor
NF
<2.5 dB
Bipolar transistor structure
Structure
NPN
Collector-base pulse voltage
UCBO-i
<250 V<250 V<160 V<135 V<80 V
Transistor collector power with heatsink
PC-HS
<50 W<60 W<60 W<60 W<60 W
Collector-emitter pulse voltage with base disconnected
UCEO-i
<250 V<250 V<160 V<135 V<80 V