КТ807А

КТ807, КТ807А, КТ807Б

High power silicon transistor for frame and line scan generators, low frequency amplifiers, power supplies

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Description

Parameters

ParameterКТ807АКТ807Б
Collector surge current
IC-i
<1.5 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<100 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<100 V
Static current transfer coefficient of bipolar transistor
hFE
15 ~ 4530 ~ 100
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<5 mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<5 MHz
Noise factor
NF
<1 dB
Bipolar transistor structure
Structure
NPN
Transistor collector power with heatsink
PC-HS
<10 W