КТ805АМ

КТ805, КТ805АМ, КТ805БМ, КТ805ВМ, КТ805ИМ

High power silicon transistor for output stages of horizontal scanning of televisions, ignition systems of internal combustion engines

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Description

Parameters

ParameterКТ805АМКТ805БМКТ805ВМКТ805ИМ
Collector surge current
IC-i
<8 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<60 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<60 V
Static current transfer coefficient of bipolar transistor
hFE
>15
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<20 MHz
Noise factor
NF
<2.5 dB<5 dB<2.5 dB<2.5 dB
Bipolar transistor structure
Structure
NPN
Collector-base pulse voltage
UCBO-i
<160 V<135 V<135 V<135 V
Transistor collector power with heatsink
PC-HS
<30 W
Collector-emitter pulse voltage with base disconnected
UCEO-i
<160 V<135 V<135 V<135 V