КТ801Б

КТ801, КТ801А, КТ801Б

High power silicon transistor for work in vertical and horizontal scanning schemes, in power sources

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Description

Parameters

ParameterКТ801АКТ801Б
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<80 V<60 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<80 V<60 V
Static current transfer coefficient of bipolar transistor
hFE
15 ~ 5030 ~ 150
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<10 mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<10 MHz
Noise factor
NF
<2 dB
Bipolar transistor structure
Structure
NPN
Transistor collector power with heatsink
PC-HS
<5 W