КТ710А

КТ710, КТ710А

High-power low-frequency silicon transistor for use in high-voltage stabilizers and switching devices

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Description

Parameters

ParameterКТ710А
Collector surge current
IC-i
<7.5 A
Static current transfer coefficient of bipolar transistor
hFE
>3.5
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<2 mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<1.5 MHz
Noise factor
NF
<3.5 dB
Bipolar transistor structure
Structure
NPN
Collector-base pulse voltage
UCBO-i
<3 kV
Transistor collector power with heatsink
PC-HS
<50 W
Collector-emitter pulse voltage with base disconnected
UCEO-i
<3 kV