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| Parameter | 2Т716АГ | 2Т716Б1 | 2Т716В1 | |
|---|---|---|---|---|
Collector surge current | IC-i | <20 A | ||
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <100 V | <80 V | <60 V |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <100 V | <80 V | <60 V |
Constant power dissipated on the transistor collector | PC | <1 W | ||
Static current transfer coefficient of bipolar transistor | hFE | >500 | >750 | >750 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <1 mA | ||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <5 MHz | ||
Noise factor | NF | <2 dB | ||
Bipolar transistor structure | Structure | NPN | ||
Transistor collector power with heatsink | PC-HS | <30 W | ||