2Т709Б2

КТ709, 2Т709А2, 2Т709Б2, 2Т709В2

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Description

Parameters

Parameter2Т709А22Т709Б22Т709В2
Collector surge current
IC-i
<20 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<100 V<80 V<60 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<100 V<80 V<60 V
Constant power dissipated on the transistor collector
PC
<1 W
Static current transfer coefficient of bipolar transistor
hFE
>500>750>750
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<1 mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<5 MHz
Noise factor
NF
<2 dB
Bipolar transistor structure
Structure
PNP
Transistor collector power with heatsink
PC-HS
<30 W