КТ686

КТ686, КТ686А, КТ686Б, КТ686В, КТ686Г, КТ686Д, КТ686Е, КТ686Ж

Medium-power high-frequency silicon transistor for use in pre-termination and termination stages of radio frequency circuits, in amplification circuits and for universal use

Documents

Description

Parameters

ParameterКТ686АКТ686БКТ686ВКТ686ГКТ686ДКТ686ЕКТ686Ж
Collector surge current
IC-i
<1.5 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<50 V<50 V<50 V<30 V<30 V<30 V<30 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<45 V<45 V<45 V<25 V<25 V<25 V<25 V
Constant power dissipated on the transistor collector
PC
<625 mW
Static current transfer coefficient of bipolar transistor
hFE
100 ~ 250160 ~ 400250 ~ 630100 ~ 250160 ~ 400250 ~ 630100 ~ 250
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<100 nA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<100 MHz
Noise factor
NF
<700 mdB
Bipolar transistor structure
Structure
PNP
Transistor collector power with heatsink
PC-HS
<1.4 W