КТ684Б

КТ684, КТ684А, КТ684Б, КТ684В

High-frequency silicon transistor of medium power for operation in switching and amplifying circuits of household video equipment

Documents

Description

Parameters

ParameterКТ684АКТ684БКТ684В
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<45 V<60 V<100 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<45 V<60 V<100 V
Constant power dissipated on the transistor collector
PC
<800 mW
Static current transfer coefficient of bipolar transistor
hFE
40 ~ 25040 ~ 16040 ~ 160
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<100 nA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<40 MHz
Noise factor
NF
<500 mdB
Bipolar transistor structure
Structure
PNP