КТ681А

КТ681, КТ681А

Medium Power Silicon Transistor for Low Frequency Amplifiers

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterКТ681А
Collector surge current
IC-i
<2 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<30 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<25 V
Constant power dissipated on the transistor collector
PC
<350 mW
Static current transfer coefficient of bipolar transistor
hFE
85 ~ 300
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<10 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<120 MHz
Noise factor
NF
<200 mdB
Bipolar transistor structure
Structure
PNP