КТ668А

КТ668, КТ668А, КТ668Б, КТ668В

Medium-power high-frequency silicon transistor for low-frequency low-noise devices, for generators and switching devices

Documents

Description

Parameters

ParameterКТ668АКТ668БКТ668В
Collector surge current
IC-i
<200 mA
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<50 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<45 V
Constant power dissipated on the transistor collector
PC
<500 mW
Static current transfer coefficient of bipolar transistor
hFE
75 ~ 140125 ~ 250220 ~ 475
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<15 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<200 MHz
Noise factor
NF
(not set)<300 mdB<300 mdB
Bipolar transistor structure
Structure
PNP