КТ660

КТ660, КТ660А, КТ660Б

Medium Power High Frequency Silicon Transistor for Pulse Circuits and Electrical Oscillators

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Description

Parameters

ParameterКТ660АКТ660Б
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<50 V<30 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<50 V<30 V
Constant power dissipated on the transistor collector
PC
<500 mW
Static current transfer coefficient of bipolar transistor
hFE
110 ~ 220200 ~ 450
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<1 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<200 MHz
Noise factor
NF
<500 mdB
Bipolar transistor structure
Structure
NPN