КТ645А

КТ645, КТ645А, КТ645Б

Medium-power high-frequency silicon transistor for use in high-frequency generators and amplifiers, in high-speed switching devices

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Description

Parameters

ParameterКТ645АКТ645Б
Collector surge current
IC-i
<600 mA
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<60 V<40 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<60 V<40 V
Constant power dissipated on the transistor collector
PC
<500 mW
Static current transfer coefficient of bipolar transistor
hFE
20 ~ 200>80
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<10 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<200 MHz
Noise factor
NF
<500 mdB
Bipolar transistor structure
Structure
NPN
Transistor collector power with heatsink
PC-HS
<1 W(not set)