КТ644Б

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Parameter		КТ644А	КТ644Б	КТ644В	КТ644Г
Collector surge current	I_C-i	<1 A
Collector-base voltage at a given reverse collector current and open emitter circuit	U_CBO	<60 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current	U_CEO	<60 V	<60 V	<40 V	<40 V
Constant power dissipated on the transistor collector	P_C	<1 W
Static current transfer coefficient of bipolar transistor	hFE	40 ~ 120	100 ~ 300	40 ~ 120	100 ~ 300
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера	I_CB-R	<1 µA
Limit frequency of current transfer coefficient of a bipolar transistor	f_h21	<200 MHz
Noise factor	N_F	<400 mdB
Bipolar transistor structure	Structure	PNP
Transistor collector power with heatsink	P_C-HS	<12.5 W

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