КТ639А

КТ639, КТ639А, КТ639Б, КТ639В, КТ639Г, КТ639Д, КТ639Е, КТ639Ж, КТ639И

Medium-power high-frequency silicon transistor for use in low-frequency amplifiers, power amplifiers, video amplifiers, switching and switching devices

Documents

Description

Parameters

ParameterКТ639АКТ639БКТ639ВКТ639ГКТ639ДКТ639ЕКТ639ЖКТ639И
Collector surge current
IC-i
<2 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<45 V<45 V<45 V<60 V<60 V<100 V<100 V<30 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<45 V<45 V<45 V<60 V<60 V<100 V<100 V<30 V
Constant power dissipated on the transistor collector
PC
<1 W
Static current transfer coefficient of bipolar transistor
hFE
40 ~ 10063 ~ 160100 ~ 25040 ~ 10063 ~ 16040 ~ 10063 ~ 160180 ~ 400
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<100 nA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<80 MHz
Noise factor
NF
<500 mdB
Bipolar transistor structure
Structure
PNP
Transistor collector power with heatsink
PC-HS
<12.5 W<12.5 W<12.5 W<12.5 W<12.5 W(not set)(not set)(not set)