КТ630

КТ630, КТ630А, КТ630Б, КТ630В, КТ630Г, КТ630Д, КТ630Е

Medium Power High Frequency Silicon Transistor for Operation in Amplifier and Pulse Circuits

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Description

Parameters

ParameterКТ630АКТ630БКТ630ВКТ630ГКТ630ДКТ630Е
Collector surge current
IC-i
<2 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<120 V<120 V<150 V<100 V<60 V<60 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<120 V<120 V<150 V<100 V<60 V<60 V
Constant power dissipated on the transistor collector
PC
<800 mW
Static current transfer coefficient of bipolar transistor
hFE
40 ~ 12080 ~ 24040 ~ 12040 ~ 12080 ~ 240160 ~ 480
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<1 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<50 MHz
Noise factor
NF
<300 mdB
Bipolar transistor structure
Structure
NPN