КТ626Б

КТ626, КТ626А, КТ626Б, КТ626В, КТ626Г, КТ626Д

Medium-power high-frequency silicon transistor for operation in amplifiers and generators of the short-wave range

Documents

Description

Parameters

ParameterКТ626АКТ626БКТ626ВКТ626ГКТ626Д
Collector surge current
IC-i
<1.5 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<45 V<60 V<80 V<20 V<20 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<45 V<60 V<80 V<20 V<20 V
Static current transfer coefficient of bipolar transistor
hFE
40 ~ 25030 ~ 10040 ~ 12015 ~ 6040 ~ 250
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<10 µA<50 µA<50 µA<150 µA<150 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<75 MHz<75 MHz<45 MHz<45 MHz<45 MHz
Noise factor
NF
<1 dB
Bipolar transistor structure
Structure
PNP
Transistor collector power with heatsink
PC-HS
<6.5 W