КТ6127Б

КТ6127, КТ6127А, КТ6127Б, КТ6127В, КТ6127Г, КТ6127Д, КТ6127Е, КТ6127Ж, КТ6127И, КТ6127К

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Description

Parameters

ParameterКТ6127АКТ6127БКТ6127ВКТ6127ГКТ6127ДКТ6127ЕКТ6127ЖКТ6127ИКТ6127К
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<90 V<70 V<50 V<30 V<20 V<10 V<120 V<160 V<200 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<90 V<70 V<50 V<30 V<12 V<12 V<120 V<160 V<200 V
Constant power dissipated on the transistor collector
PC
<800 mW
Static current transfer coefficient of bipolar transistor
hFE
>30>30>50>50>50>50>30>30>30
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<20 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<200 MHz
Noise factor
NF
<150 mdB<150 mdB<300 mdB<300 mdB<300 mdB<300 mdB<200 mdB<200 mdB<250 mdB
Bipolar transistor structure
Structure
PNP