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| Parameter | КТ6127А | КТ6127Б | КТ6127В | КТ6127Г | КТ6127Д | КТ6127Е | КТ6127Ж | КТ6127И | КТ6127К | |
|---|---|---|---|---|---|---|---|---|---|---|
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <90 V | <70 V | <50 V | <30 V | <20 V | <10 V | <120 V | <160 V | <200 V |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <90 V | <70 V | <50 V | <30 V | <12 V | <12 V | <120 V | <160 V | <200 V |
Constant power dissipated on the transistor collector | PC | <800 mW | ||||||||
Static current transfer coefficient of bipolar transistor | hFE | >30 | >30 | >50 | >50 | >50 | >50 | >30 | >30 | >30 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <20 µA | ||||||||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <200 MHz | ||||||||
Noise factor | NF | <150 mdB | <150 mdB | <300 mdB | <300 mdB | <300 mdB | <300 mdB | <200 mdB | <200 mdB | <250 mdB |
Bipolar transistor structure | Structure | PNP | ||||||||