КТ611АМ

КТ611, КТ611АМ, КТ611БМ

Medium-power high-frequency silicon transistor for amplification and generation of signals in the high frequency range

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Description

Parameters

ParameterКТ611АМКТ611БМ
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<200 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<180 V
Constant power dissipated on the transistor collector
PC
<800 mW
Static current transfer coefficient of bipolar transistor
hFE
10 ~ 4030 ~ 120
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<100 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<60 MHz
Noise factor
NF
<800 mdB
Bipolar transistor structure
Structure
NPN
Transistor collector power with heatsink
PC-HS
<3 W