КТ608

КТ608, КТ608А, КТ608Б

Medium Power High Frequency Silicon Transistor for High Speed ​​Pulse and High Frequency Circuits

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterКТ608АКТ608Б
Collector surge current
IC-i
<800 mA
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<60 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<60 V
Constant power dissipated on the transistor collector
PC
<500 mW
Static current transfer coefficient of bipolar transistor
hFE
20 ~ 8040 ~ 160
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<10 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<200 MHz
Noise factor
NF
<1 dB
Bipolar transistor structure
Structure
NPN
Collector-base pulse voltage
UCBO-i
<80 V
Collector-emitter pulse voltage with base disconnected
UCEO-i
<80 V