КТ605
КТ605, КТ605А(М), КТ605Б(М)
Medium-power high-frequency silicon transistor for operation in pulsed, switching and amplifying high-frequency circuits
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Description
Parameters
| Parameter | КТ605А(М) | КТ605Б(М) | |
|---|---|---|---|
Collector surge current | IC-i | <200 mA | |
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <300 V | |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <250 V | |
Constant power dissipated on the transistor collector | PC | <400 mW | |
Static current transfer coefficient of bipolar transistor | hFE | 10 ~ 40 | 30 ~ 120 |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <20 µA | |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <40 MHz | |
Noise factor | NF | <8 dB | |
Bipolar transistor structure | Structure | NPN | |