КТ604Б(М)

КТ604, КТ604А(М), КТ604Б(М)

Medium Power High Frequency Silicon Transistor for Use in Operational Amplifier, Video Amplifier, and Sweep Generator Circuits

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Description

Parameters

ParameterКТ604А(М)КТ604Б(М)
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<300 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<250 V
Constant power dissipated on the transistor collector
PC
<800 mW
Static current transfer coefficient of bipolar transistor
hFE
10 ~ 4030 ~ 120
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<20 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<40 MHz
Noise factor
NF
<8 dB
Bipolar transistor structure
Structure
NPN
Transistor collector power with heatsink
PC-HS
<3 W