КТ602Б(М)

КТ602, КТ602А(М), КТ602Б(М), КТ602В, КТ602Г

Medium Power Silicon Transistor for Signal Amplification and Generation

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Description

Parameters

Parameter		КТ602А(М)	КТ602Б(М)	КТ602В	КТ602Г
Collector surge current	I_C-i	<500 mA	<500 mA	<300 mA	<300 mA
Collector-base voltage at a given reverse collector current and open emitter circuit	U_CBO	<120 V	<120 V	<80 V	<80 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current	U_CEO	<100 V	<100 V	<80 V	<80 V
Constant power dissipated on the transistor collector	P_C	<850 mW
Static current transfer coefficient of bipolar transistor	hFE	20 ~ 80	50 ~ 200	15 ~ 80	>50
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера	I_CB-R	<70 µA
Limit frequency of current transfer coefficient of a bipolar transistor	f_h21	<150 MHz
Bipolar transistor structure	Structure	NPN
Transistor collector power with heatsink	P_C-HS	<2.8 W