КТ602

КТ602, КТ602А(М), КТ602Б(М), КТ602В, КТ602Г

Medium Power Silicon Transistor for Signal Amplification and Generation

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Description

Parameters

ParameterКТ602А(М)КТ602Б(М)КТ602ВКТ602Г
Collector surge current
IC-i
<500 mA<500 mA<300 mA<300 mA
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<120 V<120 V<80 V<80 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<100 V<100 V<80 V<80 V
Constant power dissipated on the transistor collector
PC
<850 mW
Static current transfer coefficient of bipolar transistor
hFE
20 ~ 8050 ~ 20015 ~ 80>50
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<70 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<150 MHz
Bipolar transistor structure
Structure
NPN
Transistor collector power with heatsink
PC-HS
<2.8 W