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КТ601

КТ601, КТ601А(М)

Medium-power high-frequency silicon transistor for use in broadcast and TV receiver circuits

Documents

Description

Parameters

ParameterКТ601А(М)
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<100 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<100 V
Constant power dissipated on the transistor collector
PC
<250 mW
Static current transfer coefficient of bipolar transistor
hFE
<16
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<50 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<40 MHz
Bipolar transistor structure
Structure
NPN
Transistor collector power with heatsink
PC-HS
<500 mW