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КТ506

КТ506, КТ506А, КТ506Б

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Description

Parameters

ParameterКТ506АКТ506Б
Collector surge current
IC-i
<5 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<800 V<600 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<600 V
Constant power dissipated on the transistor collector
PC
<800 mW
Static current transfer coefficient of bipolar transistor
hFE
30 ~ 150
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<1 mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<10 MHz
Bipolar transistor structure
Structure
NPN
Transistor collector power with heatsink
PC-HS
<10 W