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КТ504А

КТ504, КТ504А, КТ504Б, КТ504В

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Description

Parameters

ParameterКТ504АКТ504БКТ504В
Collector surge current
IC-i
<2 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<400 V<250 V<300 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<350 V<200 V<275 V
Constant power dissipated on the transistor collector
PC
<1 W
Static current transfer coefficient of bipolar transistor
hFE
15 ~ 100
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<100 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<20 MHz
Bipolar transistor structure
Structure
NPN
Transistor collector power with heatsink
PC-HS
<10 W