КТ399АМ
КТ399, КТ399А, КТ399АМ
High-frequency low-power silicon transistor with a normalized noise level at a frequency of 400 MHz for use in the input and subsequent stages of high and ultra-high frequency amplifiers
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Description
Parameters
| Parameter | КТ399А | КТ399АМ | |
|---|---|---|---|
Collector surge current | IC-i | <40 mA | <60 mA |
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <15 V | |
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <15 V | |
Constant power dissipated on the transistor collector | PC | <150 mW | |
Static current transfer coefficient of bipolar transistor | hFE | >40 | |
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <500 nA | |
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <21.8 GHz | |
Noise factor | NF | <2 dB | |
Bipolar transistor structure | Structure | NPN | |