КТ372Б
КТ372, КТ372А, КТ372Б, КТ372В
High-frequency low-power silicon transistor with a normalized noise level at a frequency of 1 GHz for use in the input and subsequent stages of microwave amplifiers
Documents
Description
Parameters
| Parameter | КТ372А | КТ372Б | КТ372В | |
|---|---|---|---|---|
Collector-base voltage at a given reverse collector current and open emitter circuit | UCBO | <15 V | ||
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current | UCEO | <15 V | ||
Constant power dissipated on the transistor collector | PC | <50 mW | ||
Static current transfer coefficient of bipolar transistor | hFE | >10 | ||
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера | ICB-R | <500 nA | ||
Limit frequency of current transfer coefficient of a bipolar transistor | fh21 | <2.4 GHz | <3 GHz | <2.4 GHz |
Noise factor | NF | <3.5 dB | <5.5 dB | <5.5 dB |
Bipolar transistor structure | Structure | NPN | ||